QJD1210010 Details_QJD1210010 PDF Document_Powerex Inc.-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	2 N-Channel (Dual)
FET Feature	Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Rds On (Max) @ Id, Vgs	25mOhm @ 100A, 20V
Vgs(th) (Max) @ Id	5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs	500nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds	10200pF @ 800V
Power - Max	1080W
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	Module

Other

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