CTLDM303N-M832DS BK Details_CTLDM303N-M832DS BK PDF Document_Central Semiconductor Corp-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	2 N-Channel (Dual)
FET Feature	Standard
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	3.6A (Ta)
Rds On (Max) @ Id, Vgs	40mOhm @ 1.8A, 4.5V
Vgs(th) (Max) @ Id	1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	13nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	590pF @ 10V
Power - Max	1.65W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-TDFN Exposed Pad
Supplier Device Package	TLM832DS

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