QS6K1TR Details_QS6K1TR PDF Document_Rohm Semiconductor-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	1A
Rds On (Max) @ Id, Vgs	238mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	2.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	77pF @ 10V
Power - Max	1.25W
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Supplier Device Package	TSMT6 (SC-95)

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