IRF40H233ATMA1 Details_IRF40H233ATMA1 PDF Document_Infineon Technologies-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	StrongIRFET™
Package	Tape & Reel (TR)
FET Type	2 N-Channel (Dual)
FET Feature	Standard
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	65A (Tc)
Rds On (Max) @ Id, Vgs	6.2mOhm @ 35A, 10V
Vgs(th) (Max) @ Id	3.9V @ 50µA
Gate Charge (Qg) (Max) @ Vgs	57nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	20V
Power - Max	3.8W (Ta), 50W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Supplier Device Package	PG-TDSON-8-4

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