DMN3035LWN-13 Details_DMN3035LWN-13 PDF Document_Diodes Incorporated-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	2 N-Channel (Dual)
FET Feature	Standard
Drain to Source Voltage (Vdss)	-
Current - Continuous Drain (Id) @ 25°C	5.5A (Ta)
Rds On (Max) @ Id, Vgs	35mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	4.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	399pF @ 15V
Power - Max	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Supplier Device Package	V-DFN3020-8

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