UPA1952TE-T1-A Details_UPA1952TE-T1-A PDF Document_Renesas Electronics America Inc-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	2 P-Channel (Dual)
FET Feature	Logic Level Gate, 1.8V Drive
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	2A (Ta)
Rds On (Max) @ Id, Vgs	135mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	2.3nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds	272pF @ 10V
Power - Max	1.15W (Ta)
Operating Temperature	150°C
Mounting Type	Surface Mount
Package / Case	SC-95
Supplier Device Package	SC-95

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