GWS4621L Details_GWS4621L PDF Document_Renesas Electronics America Inc-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	2 N-Channel (Dual) Common Drain
FET Feature	Standard
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	10.1A (Ta)
Rds On (Max) @ Id, Vgs	9.8mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	11nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds	1125pF @ 10V
Power - Max	3.6W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	4-XFLGA, CSP
Supplier Device Package	4-WLCSP (1.82x1.82)

Other

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