CAS300M17BM2 Details_CAS300M17BM2 PDF Document_Cree/Wolfspeed-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	Z-Rec®
Package	Tray
FET Type	2 N-Channel (Half Bridge)
FET Feature	Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)	1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C	325A (Tc)
Rds On (Max) @ Id, Vgs	10mOhm @ 225A, 20V
Vgs(th) (Max) @ Id	2.3V @ 15mA (Typ)
Gate Charge (Qg) (Max) @ Vgs	1076nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds	20000pF @ 1000V
Power - Max	1760W
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	Module

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