FDS8958B_G Details_FDS8958B_G PDF Document_ON Semiconductor-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	PowerTrench®
Package	Tape & Reel (TR)
FET Type	N and P-Channel
FET Feature	Standard
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	6.4A, 4.5A
Rds On (Max) @ Id, Vgs	26mOhm @ 6.4A, 10V, 51mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	5.8nC @ 4.5V, 9.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	540pF @ 15V, 760pF @ 15V
Power - Max	900mW
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SO

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