IRF9952TR Details_IRF9952TR PDF Document_Infineon Technologies-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	HEXFET®
Package	Tape & Reel (TR)
FET Type	N and P-Channel
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	3.5A, 2.3A
Rds On (Max) @ Id, Vgs	100mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	190pF @ 15V
Power - Max	2W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SO

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