APTC60DDAM35T3G Details_APTC60DDAM35T3G PDF Document_Microchip Technology-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	2 N-Channel (Dual)
FET Feature	Standard
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	72A
Rds On (Max) @ Id, Vgs	35mOhm @ 72A, 10V
Vgs(th) (Max) @ Id	3.9V @ 5.4mA
Gate Charge (Qg) (Max) @ Vgs	518nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	14000pF @ 25V
Power - Max	416W
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	SP3
Supplier Device Package	SP3

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