APTM100A23SCTG Details_APTM100A23SCTG PDF Document_Microsemi Corporation-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	2 N-Channel (Half Bridge)
FET Feature	Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)	1000V (1kV)
Current - Continuous Drain (Id) @ 25°C	36A
Rds On (Max) @ Id, Vgs	270mOhm @ 18A, 10V
Vgs(th) (Max) @ Id	5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs	308nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	8700pF @ 25V
Power - Max	694W
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	SP4
Supplier Device Package	SP4

Other

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