BSO211PH Details_BSO211PH PDF Document_Infineon Technologies-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	OptiMOS™ P
Package	Bulk
FET Type	2 P-Channel (Dual)
FET Feature	Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	4A (Ta)
Rds On (Max) @ Id, Vgs	67mOhm @ 4.6A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 25µA
Gate Charge (Qg) (Max) @ Vgs	10nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	1095pF @ 15V
Power - Max	1.6W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	532-BFBGA, FCBGA
Supplier Device Package	532-FCBGA (23x23)

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