CAB450M12XM3 Details_CAB450M12XM3 PDF Document_Cree/Wolfspeed-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Box
FET Type	2 N-Channel (Half Bridge)
FET Feature	Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)	1200V
Current - Continuous Drain (Id) @ 25°C	450A
Rds On (Max) @ Id, Vgs	3.7mOhm @ 450A, 15V
Vgs(th) (Max) @ Id	3.6V @ 132mA
Gate Charge (Qg) (Max) @ Vgs	1330nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds	38000pF @ 800V
Power - Max	850W
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	Module

Other

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