TSM150NB04LDCR RLG Details_TSM150NB04LDCR RLG PDF Document_Taiwan Semiconductor Corporation-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	2 N-Channel (Dual)
FET Feature	Standard
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	8A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs	15mOhm @ 8A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	966pF @ 20V
Power - Max	2W (Ta), 40W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Supplier Device Package	8-PDFN (5x6)

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