FD6M016N03 Details_FD6M016N03 PDF Document_ON Semiconductor-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	Power-SPM™
Package	Tube
FET Type	2 N-Channel (Dual)
FET Feature	Standard
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	80A
Rds On (Max) @ Id, Vgs	1.6mOhm @ 40A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	295nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	11535pF @ 15V
Power - Max	-
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	EPM15
Supplier Device Package	EPM15

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