IRF8513PBF Details_IRF8513PBF PDF Document_Infineon Technologies-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tube
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	8A, 11A
Rds On (Max) @ Id, Vgs	15.5mOhm @ 8A, 10V
Vgs(th) (Max) @ Id	2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs	8.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	766pF @ 15V
Power - Max	1.5W, 2.4W
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SO

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