TPD3215M Details_TPD3215M PDF Document_Transphorm-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	2 N-Channel (Half Bridge)
FET Feature	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	70A (Tc)
Rds On (Max) @ Id, Vgs	34mOhm @ 30A, 8V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	28nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds	2260pF @ 100V
Power - Max	470W
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	Module
Supplier Device Package	Module

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