EFC2K103NUZTDG Details_EFC2K103NUZTDG PDF Document_ON Semiconductor-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	2 N-Channel (Dual) Common Drain
FET Feature	Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25°C	40A (Ta)
Rds On (Max) @ Id, Vgs	1.8mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id	1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	62nC @ 6V
Input Capacitance (Ciss) (Max) @ Vds	-
Power - Max	3.3W (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	10-SMD, No Lead
Supplier Device Package	10-WLCSP (3.54x1.77)

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