DMC2025UFDB-7 Details_DMC2025UFDB-7 PDF Document_Diodes Incorporated-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	N and P-Channel Complementary
FET Feature	Standard
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	6A (Ta), 3.5A (Ta)
Rds On (Max) @ Id, Vgs	25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA, 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12.3nC @ 10V, 15nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds	486pF @ 10V, 642pF @ 10V
Power - Max	700mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-UDFN Exposed Pad
Supplier Device Package	U-DFN2020-6 (Type B)

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