BSO615NGHUMA1 Details_BSO615NGHUMA1 PDF Document_Infineon Technologies-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	SIPMOS®
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	2.6A
Rds On (Max) @ Id, Vgs	150mOhm @ 2.6A, 4.5V
Vgs(th) (Max) @ Id	2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	380pF @ 25V
Power - Max	2W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	PG-DSO-8

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