FDMS3600AS Details_FDMS3600AS PDF Document_ON Semiconductor-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	PowerTrench®
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	2 N-Channel (Dual) Asymmetrical
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25°C	15A, 30A
Rds On (Max) @ Id, Vgs	5.6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1770pF @ 13V
Power - Max	2.2W, 2.5W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Supplier Device Package	Power56

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