AON3816_101 Details_AON3816_101 PDF Document_Alpha & Omega Semiconductor Inc.-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	2 N-Channel (Dual) Common Drain
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	-
Rds On (Max) @ Id, Vgs	22mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id	1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	13nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	1100pF @ 10V
Power - Max	2.5W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Supplier Device Package	8-DFN (3x3)

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