CSD75204W15 Details_CSD75204W15 PDF Document_Texas Instruments-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	NexFET™
Package	Bulk
FET Type	2 P-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	-
Current - Continuous Drain (Id) @ 25°C	3A
Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	3.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	410pF @ 10V
Power - Max	700mW
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	9-UFBGA, DSBGA
Supplier Device Package	9-DSBGA

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