IRFH4251DTRPBF Details_IRFH4251DTRPBF PDF Document_Infineon Technologies-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	FASTIRFET™
Package	Bulk
FET Type	2 N-Channel (Dual), Schottky
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25°C	64A, 188A
Rds On (Max) @ Id, Vgs	3.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	2.1V @ 35µA
Gate Charge (Qg) (Max) @ Vgs	15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	1314pF @ 13V
Power - Max	31W, 63W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Supplier Device Package	PG-TISON-8

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