PD20010S-E Details_PD20010S-E PDF Document_STMicroelectronics-Galaxy Core City

MOSFETs - RF

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Specifications

Description	Details
Series	-
Package	Tube
Transistor Type	LDMOS
Frequency	2GHz
Gain	11dB
Voltage - Test	13.6 V
Current Rating (Amps)	5A
Noise Figure	-
Current - Test	150 mA
Power - Output	10W
Voltage - Rated	40 V
Package / Case	PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
Supplier Device Package	PowerSO-10RF (Straight Lead)

Other

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