2SK4124-1E Details_2SK4124-1E PDF Document_ON Semiconductor-Galaxy Core City

MOSFETs - Single

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：19,492(Ref. price)

Qty.	Unit Price	Ext. Price
No price, please contact inquiry

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V
Current - Continuous Drain (Id) @ 25°C	20A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	430mOhm @ 8A, 10V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	46.6 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1200 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 170W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-3P-3L
Package / Case	TO-3P-3, SC-65-3

Other

Price advantage, 2SK4124-1E is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
2SK4209	ON Semiconductor	MOSFETs - Single	Datasheet	MOSFET N-CH 800V 12A TO3PB	No price	In Stock:17418
IPD70P04P409ATMA1	Infineon Technologies	MOSFETs - Single	Datasheet	MOSFET P-CH 40V 73A TO252-3	$1.46020	In Stock:17420
SCH1331-TL-H	ON Semiconductor	MOSFETs - Single	Datasheet	MOSFET P-CH 12V 3A 6SCH	No price	In Stock:17426
HAT2279N-EL-E	Renesas Electronics America Inc	MOSFETs - Single	Datasheet	MOSFET N-CH 80V 30A 8LFPAK	$1.90080	In Stock:3048
CSD18536KTT	Texas Instruments	MOSFETs - Single	Datasheet	MOSFET N-CH 60V 200A DDPAK	$5.10220	In Stock:17432