IRL8113LPBF Details_IRL8113LPBF PDF Document_Infineon Technologies-Galaxy Core City

MOSFETs - Single

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：20,612(Ref. price)

Qty.	Unit Price	Ext. Price
No price, please contact inquiry

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	HEXFET®
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	105A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	6mOhm @ 21A, 10V
Vgs(th) (Max) @ Id	2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	35 nC @ 4.5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2840 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	110W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-262
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA

Other

Price advantage, IRL8113LPBF is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
SPA07N65C3XKSA1	Infineon Technologies	MOSFETs - Single	Datasheet	POWER FIELD-EFFECT TRANSISTOR, 7	$0.94050	In Stock:11592
2N6770	Microsemi Corporation	MOSFETs - Single	Datasheet	MOSFET N-CH 500V 12A TO3	No price	In Stock:19974
JAN2N7225U	Microsemi Corporation	MOSFETs - Single	Datasheet	MOSFET N-CH 200V 27.4A TO267AB	No price	In Stock:19976
MTP23P06VG	ON Semiconductor	MOSFETs - Single	Datasheet	MOSFET P-CH 60V 23A TO220AB	$0.83160	In Stock:9689
DMN10H170SFG-13	Diodes Incorporated	MOSFETs - Single	Datasheet	MOSFET N-CH 100V PWRDI3333	$0.56840	In Stock:19980