FDC658AP Details_FDC658AP PDF Document_Fairchild Semiconductor-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	PowerTrench®
Package	Bulk
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	50mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8.1 nC @ 5 V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	470 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	1.6W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SuperSOT™-6
Package / Case	SOT-23-6 Thin, TSOT-23-6

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