CP798X-CPDM302PH-WN Details_CP798X-CPDM302PH-WN PDF Document_Central Semiconductor Corp-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tray
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	91mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id	1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	9.6 nC @ 5 V
Vgs (Max)	12V
Input Capacitance (Ciss) (Max) @ Vds	800 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	Die
Package / Case	Die

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