IRLZ14L Details_IRLZ14L PDF Document_Vishay Siliconix-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4V, 5V
Rds On (Max) @ Id, Vgs	200mOhm @ 6A, 5V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8.4 nC @ 5 V
Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	400 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	3.7W (Ta), 43W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-262-3
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA

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