APT1001RBVFRG Details_APT1001RBVFRG PDF Document_Microchip Technology-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	*
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000 V
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	1Ohm @ 5.5A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	150 nC @ 10 V
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	3050 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-
Mounting Type	Through Hole
Supplier Device Package	TO-247 [B]
Package / Case	TO-247-3

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