SD215DE TO-72 4L Details_SD215DE TO-72 4L PDF Document_Linear Integrated Systems, Inc.-Galaxy Core City

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Specifications

Description	Details
Series	SD215
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	50mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	5V, 25V
Rds On (Max) @ Id, Vgs	45Ohm @ 1mA, 10V
Vgs(th) (Max) @ Id	1.5V @ 1µA
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	+30V, -25V
Input Capacitance (Ciss) (Max) @ Vds	-
FET Feature	-
Power Dissipation (Max)	300mW (Ta)
Operating Temperature	-55°C ~ 125°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-72-4
Package / Case	TO-206AF, TO-72-4 Metal Can

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