DMPH4015SPSQ-13 Details_DMPH4015SPSQ-13 PDF Document_Diodes Incorporated-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	10mOhm @ 9.8A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	91 nC @ 10 V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	4234 pF @ 20 V
FET Feature	-
Power Dissipation (Max)	2.6W (Ta)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerDI5060-8
Package / Case	8-PowerTDFN

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