CTLDM8002A-M621H TR Details_CTLDM8002A-M621H TR PDF Document_Central Semiconductor Corp-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	50 V
Current - Continuous Drain (Id) @ 25°C	280mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Rds On (Max) @ Id, Vgs	2.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	0.72 nC @ 4.5 V
Vgs (Max)	20V
Input Capacitance (Ciss) (Max) @ Vds	70 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	1.6W (Ta)
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TLM621H
Package / Case	6-XFDFN Exposed Pad

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