HCT7000M Details_HCT7000M PDF Document_TT Electronics/Optek Technology-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	±40V
Input Capacitance (Ciss) (Max) @ Vds	60 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	300mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	3-SMD
Package / Case	3-SMD, No Lead

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