TSM650P03CX RFG Details_TSM650P03CX RFG PDF Document_Taiwan Semiconductor Corporation-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V
Rds On (Max) @ Id, Vgs	65mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	6.4 nC @ 4.5 V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	810 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	1.56W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23
Package / Case	TO-236-3, SC-59, SOT-23-3

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