STB20N60M2-EP Details_STB20N60M2-EP PDF Document_STMicroelectronics-Galaxy Core City

MOSFETs - Single

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：18,382(Ref. price)

Qty.	Unit Price	Ext. Price
No price, please contact inquiry

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	MDmesh™ M2-EP
Package	Tape & Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	22 nC @ 10 V
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	-
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D2PAK
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Other

Price advantage, STB20N60M2-EP is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
IRF520NSTRRPBF	Infineon Technologies	MOSFETs - Single	Datasheet	MOSFET N-CH 100V 9.7A D2PAK	No price	In Stock:19402
AUIRFR5505	Infineon Technologies	MOSFETs - Single	Datasheet	MOSFET P-CH 55V 18A DPAK	No price	In Stock:19408
DMP3100L-7	Diodes Incorporated	MOSFETs - Single	Datasheet	MOSFET P-CH 30V 2.7A SOT23-3	No price	In Stock:19410
G3R160MT17J	GeneSiC Semiconductor	MOSFETs - Single	Datasheet	SIC MOSFET N-CH 22A TO263-7	$12.09600	In Stock:2889
MMDF3N02HDR2	ON Semiconductor	MOSFETs - Single	Datasheet	MOSFET N-CH 20V 3.8A 8SOIC	No price	In Stock:19416