G2R120MT33J Details_G2R120MT33J PDF Document_GeneSiC Semiconductor-Galaxy Core City

MOSFETs - Single

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：2,348(Ref. price)

Qty.	Unit Price	Ext. Price
1	$92.76110	$92.76110

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	G2R™
Package	Tube
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	3300 V
Current - Continuous Drain (Id) @ 25°C	35A
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	156mOhm @ 20A, 20V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	145 nC @ 20 V
Vgs (Max)	+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds	3706 pF @ 1000 V
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263-7
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

Other

Price advantage, G2R120MT33J is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
RM3401	Rectron USA	MOSFETs - Single	Datasheet	MOSFET P-CHANNEL 30V 4.2A SOT23	$0.04180	In Stock:17482
APT18F60S	Microsemi Corporation	MOSFETs - Single	Datasheet	MOSFET N-CH 600V 19A D3PAK	No price	In Stock:17484
STW30N20	STMicroelectronics	MOSFETs - Single	Datasheet	MOSFET N-CH 200V 30A TO247-3	No price	In Stock:17488
IRFI7536GPBF	Infineon Technologies	MOSFETs - Single	Datasheet	HEXFET N-CHANNEL POWER MOSFET	$1.54230	In Stock:17492
IPB180N03S4LH0ATMA1	Infineon Technologies	MOSFETs - Single	Datasheet	MOSFET N-CH 30V 180A TO263-7	$1.83505	In Stock:17494