MIC94030YM4-TR Details_MIC94030YM4-TR PDF Document_Microchip Technology-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	TinyFET®
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	16 V
Current - Continuous Drain (Id) @ 25°C	1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.7V, 10V
Rds On (Max) @ Id, Vgs	450mOhm @ 100mA, 10V
Vgs(th) (Max) @ Id	1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	16V
Input Capacitance (Ciss) (Max) @ Vds	100 pF @ 12 V
FET Feature	-
Power Dissipation (Max)	568mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-143
Package / Case	TO-253-4, TO-253AA

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