SUP80090E-GE3 Details_SUP80090E-GE3 PDF Document_Vishay Siliconix-Galaxy Core City

MOSFETs - Single

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：1,216(Ref. price)

Qty.	Unit Price	Ext. Price
1	$3.11370	$3.11370

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	ThunderFET®
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150 V
Current - Continuous Drain (Id) @ 25°C	128A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Max) @ Id, Vgs	9.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	95 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3425 pF @ 75 V
FET Feature	-
Power Dissipation (Max)	375W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3

Other

Price advantage, SUP80090E-GE3 is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
ISL9N304AS3ST	Fairchild Semiconductor	MOSFETs - Single	Datasheet	N-CHANNEL POWER MOSFET	$1.41620	In Stock:7359
IRFR210BTM	Fairchild Semiconductor	MOSFETs - Single	Datasheet	N-CHANNEL POWER MOSFET	$0.21340	In Stock:20001
RUC002N05HZGT116	Rohm Semiconductor	MOSFETs - Single	Datasheet	MOSFET N-CH 50V 200MA SST3	$0.21560	In Stock:4417
STD3NK100Z	STMicroelectronics	MOSFETs - Single	Datasheet	MOSFET N-CH 1000V 2.5A DPAK	$1.69100	In Stock:19585
SIHD5N50D-GE3	Vishay Siliconix	MOSFETs - Single	Datasheet	MOSFET N-CH 500V 5.3A TO252AA	$1.08900	In Stock:4950