NTE2987 Details_NTE2987 PDF Document_NTE Electronics, Inc-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Bag
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	20A
Drive Voltage (Max Rds On, Min Rds On)	5V
Rds On (Max) @ Id, Vgs	120mOhm @ 10A, 5V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	30 nC @ 5 V
Vgs (Max)	±15V
Input Capacitance (Ciss) (Max) @ Vds	1500 pF @ 25 V
FET Feature	Logic Level Gate, 4V Drive
Power Dissipation (Max)	105W (Tc)
Operating Temperature	175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3

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