MSC025SMA120B4 Details_MSC025SMA120B4 PDF Document_Microchip Technology-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tube
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	103A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	31mOhm @ 40A, 20V
Vgs(th) (Max) @ Id	2.8V @ 3mA
Gate Charge (Qg) (Max) @ Vgs	232 nC @ 20 V
Vgs (Max)	+23V, -10V
Input Capacitance (Ciss) (Max) @ Vds	3020 pF @ 1000 V
FET Feature	-
Power Dissipation (Max)	500W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247-4
Package / Case	TO-247-4

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