TPCF8A01(TE85L) Details_TPCF8A01(TE85L) PDF Document_Toshiba Semiconductor and Storage-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	U-MOSIII
Package	Tape & Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2V, 4.5V
Rds On (Max) @ Id, Vgs	49mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs	7.5 nC @ 5 V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	590 pF @ 10 V
FET Feature	Schottky Diode (Isolated)
Power Dissipation (Max)	330mW (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	VS-8 (2.9x1.5)
Package / Case	8-SMD, Flat Lead

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