FDU6680 Details_FDU6680 PDF Document_ON Semiconductor-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	PowerTrench®
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	12A (Ta), 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	10mOhm @ 12A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	18 nC @ 5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1230 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	3.3W (Ta), 56W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I-PAK
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA

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