STWA40N95K5 Details_STWA40N95K5 PDF Document_STMicroelectronics-Galaxy Core City

MOSFETs - Single

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：17,598(Ref. price)

Qty.	Unit Price	Ext. Price
1	$13.94910	$13.94910

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	MDmesh™
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	950 V
Current - Continuous Drain (Id) @ 25°C	38A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	130mOhm @ 19A, 10V
Vgs(th) (Max) @ Id	5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	93 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	3300 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	450W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247-3
Package / Case	TO-247-3

Other

Price advantage, STWA40N95K5 is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
RAL045P01TCR	Rohm Semiconductor	MOSFETs - Single	Datasheet	MOSFET P-CH 12V 4.5A TUMT6	$0.64020	In Stock:5718
SUD50N04-16P-E3	Vishay Siliconix	MOSFETs - Single	Datasheet	MOSFET N-CH 40V 9.8A/20A TO252	No price	In Stock:19610
IPW60R280E6FKSA1	Infineon Technologies	MOSFETs - Single	Datasheet	MOSFET N-CH 600V 13.8A TO247-3	$2.28926	In Stock:19612
APT10M11JVRU3	Microchip Technology	MOSFETs - Single	Datasheet	MOSFET N-CH 100V 142A SOT227	$23.45280	In Stock:2743
IGW40N60TP	Infineon Technologies	MOSFETs - Single	Datasheet	IGW40N60 - DISCRETE IGBT WITHOUT	$1.56800	In Stock:3110