SSM5H16TU,LF Details_SSM5H16TU,LF PDF Document_Toshiba Semiconductor and Storage-Galaxy Core City

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Specifications

Description	Details
Series	U-MOSIII
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4V
Rds On (Max) @ Id, Vgs	133mOhm @ 1A, 4V
Vgs(th) (Max) @ Id	1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	1.9 nC @ 4 V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	123 pF @ 15 V
FET Feature	Schottky Diode (Isolated)
Power Dissipation (Max)	500mW (Ta)
Operating Temperature	150°C
Mounting Type	Surface Mount
Supplier Device Package	UFV
Package / Case	6-SMD (5 Leads), Flat Lead

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