IPA50R800CE Details_IPA50R800CE PDF Document_Infineon Technologies-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	CoolMOS™
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V
Current - Continuous Drain (Id) @ 25°C	5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	13V
Rds On (Max) @ Id, Vgs	800mOhm @ 1.5A, 13V
Vgs(th) (Max) @ Id	3.5V @ 130µA
Gate Charge (Qg) (Max) @ Vgs	12.4 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	280 pF @ 100 V
FET Feature	Super Junction
Power Dissipation (Max)	26.4W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-FP
Package / Case	TO-220-3 Full Pack

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