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MOSFETs - Single
SQS423ENW-T1_GE3 Picture

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SQS423ENW-T1_GE3

  • Vishay Siliconix
  • New
  • MOSFET P-CH 30V 16A PPAK 1212-8W
  • Datasheet download
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In Stock:4,118(Ref. price)
Qty.Unit PriceExt. Price
1
$0.75460
$0.75460
Documents
Specifications
DescriptionDetails
Series
Automotive, AEC-Q101, TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
21mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
26 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1975 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
62.5W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8W
Package / Case
PowerPAK® 1212-8W
Other
Price advantage, SQS423ENW-T1_GE3 is available in stock and can be delivered on the same day
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