CPC3703C Details_CPC3703C PDF Document_IXYS Integrated Circuits Division-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	250 V
Current - Continuous Drain (Id) @ 25°C	360mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	0V
Rds On (Max) @ Id, Vgs	4Ohm @ 200mA, 0V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	±15V
Input Capacitance (Ciss) (Max) @ Vds	350 pF @ 25 V
FET Feature	Depletion Mode
Power Dissipation (Max)	1.6W (Ta)
Operating Temperature	-55°C ~ 125°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-89-3
Package / Case	TO-243AA

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